PART |
Description |
Maker |
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc. White Electronic Designs
|
5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped. 128K x 32 SRAM. 15ns access time. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
EDI8L32256C15AC EDI8L32256C17AC EDI8L32256C17AI |
15ns; 5V power supply; 256K x 32; 8 megabit SRAM 17ns; 5V power supply; 256K x 32; 8 megabit SRAM
|
White Electronic Designs
|
IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns 64K x 9 low voltage Deep Sync FIFO, 25ns 64K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 25ns 32K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 15ns 32K x 9 low voltage Deep Sync FIFO, 25ns From old datasheet system 16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
AM8151A/BQA AM8151AXC AM8151ADCB |
15NS, 28 PLCC, COM TEMP(EPLD) 15NS, 24 PDIP, COM TEMP(EPLD) 视频DAC的调色板(的RAMDAC
|
EPCOS AG
|
IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT
|
W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55L |
SUBMINIATURE POWER RELAY 128K X 8 CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|